InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes

• Invited talk at Gallium Nitride Materials & Devices VI, SPIE Photonics West 2011

We describe recent work on nitride lasers and LEDs at PARC. The presentation includes InGaN laser diodes in which the usual epitaxial upper cladding layer is replaced with an evaporated material, such as silver. We also describe InGaN LEDs and optically-pumped 500 nm lasers grown on 2 inch semi-polar (1122) GaN on m-plane sapphire substrates. The presentation also includes results on AlGaN UV LEDs. Unpackaged λ = 325 nm LEDs of 300 µm square sizes exhibit maximum output powers of 13 mW, while 300 µm X 1 mm, λ = 290 nm devices show maximum output powers of 1.6 mW.

citation

Chua, C. L.; Yang, Z. H.; Knollenberg, C.; Teepe, M. R.; Cheng, B.; Strittmatter, A.; Bour, D. P.; Johnson, N. M. InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes. Gallium Nitride Materials & Devices VI at SPIE Photonics West 2011; 2011 January 22-27, San Francisco, CA. SPIE Proceedings 7939, 793918.