home › resources & publications › fabrication of thin film ingan light-emitting diode membranes by laser liftoff

TECHNICAL PUBLICATIONS:

Share by email

Fabrication of thin film InGaN light-emitting diode membranes by laser liftoff

  • Applied Physics Letters
 
 
citation

Wong, W. S. ; Sands, T.; Cheung, N. W.; Kneissl, M. A. ; Bour, D. P. ; Mei, P. ; Romano, L. T. ; Johnson, N. M. Fabrication of thin film InGaN light-emitting diode membranes by laser liftoff. Applied Physics Letters. 1999 September 6; 75 (10): 1360-1362.

PARC author

Noble Johnson

 

related publications

InGaN light-emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off

Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates

The integration of InGaN multiple-quantum-well laser diodes with copper substrates by laser lift-off

Integration of InGaN laser diodes with dissimilar substrates by laser lift-off

Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off

 

 

subscribe

enter email to choose newsletters: 


subscribe to blog feed