Effect of Si doping on the strain and defect structure of GaN thin films

• 20th International Conference on Defects in Semiconductors

citation

Romano, L. T. ; Van de Walle, C. G. ; Krusor, B. S. ; Lau, R. K. ; Ho, J. H. ; Schmidt, T. J. ; Ager III, J. W. ; Goetz, W. K. ; Kern, R. S Effect of Si doping on the strain and defect structure of GaN thin films. 20th International Conference on Defects in Semiconductors; 1999 July 26-30; Berkeley, CA. In Physica B. 1999 December; 274: 50-53.