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In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

 

In-well pumping of blue InGaN/GaN vertical-external-cavity surface-emitting lasers are demonstrated. The laser structures were grown on bulk GaN substrates by using metal-organic vapor phase epitaxy near atmospheric pressure. The active zone consisted of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used as mirrors. Laser emission with a single longitudinal mode at 440 nm was achieved by exclusively pumping the quantum wells with the 384 nm emission line of a dye-/N2-laser.

 
 
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citation

Wunderer, T.; Northrup, J. E.; Yang, Z.; Teepe, M. R.; Strittmatter, A.; Johnson, N. M.; Rotella, P.; Wraback, M. In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers. Applied Physics Letters. 2011 November; 99 (20): 201109.

copyright

Copyright © American Institute of Physics, 2011. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://link.aip.org/link/?apl/99/201109.