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Flexible x-ray detector array fabricated with oxide thin film transistors

 

A flat panel flexible x-ray image sensor fabricated with oxide thin film transistors (TFT) is described. Bottom gate GaInZnO TFTs are fabricated on a plastic substrate and integrated with amorphous silicon p-i-n photodiodes, with a maximum process temperature of 170C. X-ray images obtained with a 160x180 pixel array in the indirect detection mode are reported.

 
 
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citation

Lujan, R. A.; Street, R. A. Flexible x-ray detector array fabricated with oxide thin film transistors. IEEE Electron Device Letters. 2012 May; 33 (5): 688-690.

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