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Deep level transient spectroscopy: a case study on GaAs
- Characterization of Compound Semiconductor Processing
citation
Götz, W. K.; Johnson, N. M. Deep level transient spectroscopy: a case study on GaAs. In Characterization of Compound Semiconductor Processing edited by Y. Strausser and G. E. McGuire. Boston: Butterworth-Heinemann; 1995; 109-123.
PARC author
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