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Effect of non-ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon
- Physical Review B
citation
Jackson, W. B.; Johnson, N. M. Effect of non-ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon. Physical Review B [Condensed Matter]. 1995 July 15; 52 (4): 2233-2236.
PARC author
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