n-type and p-type doping of ZnSe with gas source molecular beam epitaxy

• Compound Semiconductor Epitaxy, Materials Research Society Symposium Proceedings vol. 340

citation

Fisher, P. A.; Ho, E.; House, J. L.; Petrich, G. S.; Kolodziejski, L. A.; Brandt, M. S.; Johnson, N. M. n-type and p-type doping of ZnSe with gas source molecular beam epitaxy. Compound Semiconductor Epitaxy, Materials Research Society Symposium, vol. 340, edited by C. W. Tu, L. A. Kolodziejski, and V. R. McCrary. Warrendale, PA: Materials Research Society; 1994; 451-456.