Evidence for defect metastability in hydrogen passivated fine grain polycrystalline silicon

• Polycrystalline Semiconductors III -- Physics and Technology, Proceedings of the Third International Conference

citation

Nickel, N. H.; Johnson, N. M.; Jackson, W. B. Evidence for defect metastability in hydrogen passivated fine grain polycrystalline silicon. Polycrystalline Semiconductors III -- Physics and Technology, Proceedings of the Third International Conference. edited by H. P. Strunk, J. H. Werner, B. Fortin, and O. Bonnaud. In Solid State Phenomena. 1994; 37-38: 367-372.