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Deposited silicon nitride with low electron trapping rates

  • Journal of Applied Physics
 
 
citation

Park, Y. C.; Jackson, W. B.; Smith, D. L.; Johnson, N. M. Deposited silicon nitride with low electron trapping rates. Journal of Applied Physics. 1993 July 1; 74 (1): 381-386.

PARC author

Noble Johnson

 

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