Re-evaluation of electric-field enhanced emission measurements for use in type and charge state determination of point defects

• Proceedings of the 16th International Conference on Defects in Semiconductors

citation

Buckwald, W. R.; Grimmeiss, H. G.; Rong, F. C.; Johnson, N. M.; Poindexter, E. H. Re-evaluation of electric-field enhanced emission measurements for use in type and charge state determination of point defects. Proceedings of the 16th International Conference on Defects in Semiconductors, edited by G. Davies, G. G. DeLeo, and M. Stavola. Zurich: Trans Tech; 1992; 83-87: 1153-1158.