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Enhancement of photoluminescence intensity in InGaAs/AlxGa1-xAs quantum wells by hydrogenation

  • Applied Physics Letters
 
 
citation

Lord, S. M.; Roos, G.; Pezeshki, B.; Harris, Jr., J. S.; Johnson, N. M. Enhancement of photoluminescence intensity in InGaAs/AlxGa1-xAs quantum wells by hydrogenation. Applied Physics Letters. 1992 May 4; 60 (18): 2276 - 2278.

PARC author

Noble Johnson

 

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