Hydrogen passivation of defects in InGaAs/AlxGa1-xAs quantum wells

• Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

citation

Lord, S. M.; Roos, G.; Pezeshki, B.; Harris, Jr., J. S.; Johnson, N. M. Hydrogen passivation of defects in InGaAs/AlxGa1-xAs quantum wells. Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber. Warrendale, PA: Materials Research Society; 1992; 881-886.