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TECHNICAL PUBLICATIONS:
Hydrogen passivation of defects in InGaAs/AlxGa1-xAs quantum wells
- Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262
citation
Lord, S. M.; Roos, G.; Pezeshki, B.; Harris, Jr., J. S.; Johnson, N. M. Hydrogen passivation of defects in InGaAs/AlxGa1-xAs quantum wells. Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber. Warrendale, PA: Materials Research Society; 1992; 881-886.