Dissociation kinetics of hydrogen-neutralized Si donors and DX centers in AlGaAs

• Proceedings of the 16th International Conference on Defects in Semiconductors

citation

Roos, G.; Johnson, N. M.; Herring, C.; Harris, Jr., J. S. Dissociation kinetics of hydrogen-neutralized Si donors and DX centers in AlGaAs. Proceedings of the 16th International Conference on Defects in Semiconductors, edited by G. Davies, G. G. DeLeo, and M. Stavola. Zurich: Trans Tech Publs; 1992; 83-87: 605-610. N