Hydrogen passivation and reactivation of DX centers in Se-doped and Si-doped AlGaAs--a comparison

• Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

citation

Roos, G.; Johnson, N. M.; Herring, C.; Harris, Jr., J. S. Hydrogen passivation and reactivation of DX centers in Se-doped and Si-doped AlGaAs--a comparison. Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber. Warrendale, PA: Materials Research Society, 1992; 419-424.