Hydrogen passivation of Si and Be dopants in InAlAs

• Advanced III-V Compound Semiconductor Growth, Processing and Devices, Materials Research Society Symposium Proceedings, vol. 240

citation

Roos, G.; Johnson, N. M.; Pao, Y. C.; Harris, Jr., J. S.; Herring, C. Hydrogen passivation of Si and Be dopants in InAlAs. Advanced III-V Compound Semiconductor Growth, Processing and Devices, Materials Research Society Symposium Proceedings, vol. 240, edited by S. J. Pearton, D. K. Sadana, and J. M. Zavada. Warrendale, PA: Materials Research Society; 1992; 667-672.