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Intrinsic stress in hydrogenated amorphous silicon deposited in a remote hydrogen plasma reactor

  • Journal of Applied Physics
 
 
citation

Stevens, K. S.; Johnson,N. M. Intrinsic stress in hydrogenated amorphous silicon deposited in a remote hydrogen plasma reactor. Journal of Applied Physics. 1992 March 15; 71 (6): 2628-2631.

PARC author

Noble Johnson

 

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