Donor reactivation kinetics and hydrogen redistribution in the space charge layer of n-type silicon

• Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

citation

Wu, Y.-A.; Roos, G.; Johnson, N. M.; Herring, C. Donor reactivation kinetics and hydrogen redistribution in the space charge layer of n-type silicon. Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber. Warrendale, PA: Materials Research Society; 1992; 449-454.