Neutralization of donor dopants and formation of hydrogen-induced defects in n-type silicon

• Hydrogen in Semiconductors, vol. 34 in Semiconductors and Semimetals

citation

Johnson, N. M. Neutralization of donor dopants and formation of hydrogen-induced defects in n-type silicon. In Hydrogen in Semiconductors, volume editors J. I. Pankove and N. M. Johnson, vol. 34 in Semiconductors and Semimetals published by Academic Press (New York, 1991), treatise eds. R. K. Willardson and A. C. Beer, Chap. 7; 113-138.