Electrical and optical characterization of metastable deep-level defects in GaAs

• Physical Review B

citation

W. R. Buchwald, G. J. Gerardi, E. H. Poindexter, N. M. Johnson, H. G. Grimmeiss, and D. J. Keeble, "Electrical and optical characterization of metastable deep-level defects in GaAs,” Physical Review B, Vol. 40, No. 5, pp. 2940-2945 (August 15, 1989).