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Optical and electrical studies of interface traps in the Si/SiO2 system by modified junction space charge techniques

 
 
citation

H. G. Grimmeiss, W. R. Buchwald, E. H. Poindexter, P. J. Caplan, M. Harmatz, G. J. Gerardi, D. J. Keeble, and N. M. Johnson, "Optical and electrical studies of interface traps in the Si/SiO2 system by modified junction space charge techniques,” Physical Review B, Vol. 39, No. 8, pp. 5175-5185 (15 March 1989).