Electron trapping properties of silicon nitride determined by avalanche injection

• Amorphous Silicon Technology--1989, Materials Research Society Symposium Proceedings, Vol. 149

citation

Y. C. Park, W. B. Jackson, N. M. Johnson, and S. B. Hagstrom, "Electron trapping properties of silicon nitride determined by avalanche injection,” Amorphous Silicon Technology--1989 (Materials Research Society, Pittsburgh, PA, 1989), eds. A. Madan, M. J. Thompson, P. C. Taylor, Y. Hamakawa, and P. G. LeComber, Materials Research Society Symposium Proceedings Series, Vol. 149, pp. 551-556.