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TECHNICAL PUBLICATIONS:
Electronic and optical properties of silicon dangling-bond defects at the Si-SiO2 interface
- The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
citation
N. M. Johnson, "Electronic and optical properties of silicon dangling-bond defects at the Si-SiO2 interface,” The Physics and Chemistry of SiO2 and the Si-SiO2 Interface (Plenum, New York, 1988), eds. C. R. Helms and B. E. Deal, pp. 319-326.
PARC author
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