home › resources & publications › microscopic identity of characteristic gap states at the interface in oxide-on-si structures
TECHNICAL PUBLICATIONS:
Microscopic identity of characteristic gap states at the interface in oxide-on-Si structures
- Properties of Silicon, EMIS Datareviews
citation
N. M. Johnson and E. H. Poindexter, "Microscopic identity of characteristic gap states at the interface in oxide-on-Si structures," Properties of Silicon (INSPEC, New York, 1988), EMIS Datareviews Series, No. 4 (RN=16169), pp. 548-553.
PARC author
subscribe
enter email to choose newsletters:
