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Hydrogen diffusion and dopant passivation in single-crystal silicon
- 18th International Conference on the Physics of Semiconductors
citation
N. M. Johnson, C. Herring, and D. J. Chadi, "Hydrogen diffusion and dopant passivation in single-crystal silicon," 18th International Conference on the Physics of Semiconductors (World Scientific, Singapore, 1987), ed. O. Engström, Vol. 2, pp. 991-994.
PARC author
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