High resolution TEM of hydrogen-induced microdefects in silicon

• Microscopy of Semiconducting Materials

citation

F. A. Ponce, N. M. Johnson, J. C. Tramontana, and J. Walker, "High resolution TEM of hydrogen-induced microdefects in silicon," Microscopy of Semiconducting Materials, 1987, eds. A. G. Cullis and P. D. Augustus, Institute of Physics Conference Series, No. 87: Section 1, IOP Puiblishing Ltd., pp. 49-54.