homeresources & publications › interface traps and pb centers in oxidized (100) silicon wafers

TECHNICAL PUBLICATIONS:

Interface traps and Pb centers in oxidized (100) silicon wafers

 
 
citation

G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, "Interface traps and Pb centers in oxidized (100) silicon wafers," Applied Physics Letters, Vol. 49, pp. 348-350 (1986).

PARC author

Noble Johnson

 

subscribe

enter email to choose newsletters: 


subscribe to blog feed