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Interface traps and Pb centers in oxidized (100) silicon wafers
- Applied Physics Letters
citation
G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, "Interface traps and Pb centers in oxidized (100) silicon wafers," Applied Physics Letters, Vol. 49, pp. 348-350 (1986).
PARC author
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