home › resources & publications › hydrogen passivation of the oxygen-related thermal-donor defect in silicon
TECHNICAL PUBLICATIONS:
Hydrogen passivation of the oxygen-related thermal-donor defect in silicon
- Applied Physics Letters
citation
N. M. Johnson and S. K. Hahn, "Hydrogen passivation of the oxygen-related thermal-donor defect in silicon," Applied Physics Letters, Vol. 48, pp. 709-711 (1986).
PARC author
subscribe
enter email to choose newsletters:
