EBIC measurement and grain-boundary recombination in SOI polycrystalline silicon

• IEEE Transactions on Electron Devices

citation

K.-C. Wu, R. W. Dutton, and N. M. Johnson, "EBIC measurement and grain-boundary recombination in SOI polycrystalline silicon," IEEE Transactions on Electron Devices, Vol. ED-33, No. 7, pp. 1020-1027 (July 1986).