Charge trapping and impurity diffusion in nitrided oxides on silicon

• Proceedings of the 1985 International Symposium on VLSI Technology, Systems and Applications

citation

S.-T. Chang, S. A. Lyon, and N. M. Johnson, "Charge trapping and impurity diffusion in nitrided oxides on silicon," Proceedings of the 1985 International Symposium on VLSI Technology, Systems and Applications (NCS and ITRI, Taiwan, 1985), ed. H. N. Yu, pp. 300-304.