Comparison of the optical cross section for the Si dangling bond in a-Si:H and at the c-Si/SiO2 interface

• Microscopic Identification of Electronic Defects in Semiconductors, MRS Proceedings Vol. 46

citation

W. B. Jackson and N. M. Johnson, "Comparison of the optical cross section for the Si dangling bond in a-Si:H and at the c-Si/SiO2 interface," Microscopic Identification of Electronic Defects in Semiconductors (Materials Research Society, Pittsburgh, PA, 1985), eds. N. M. Johnson, S. G. Bishop, and G. D. Watkins, MRS Proceedings Vol. 46, pp. 545-551.