homeresources & publications › electric-field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal silicon

TECHNICAL PUBLICATIONS:

Electric-field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal silicon

 
 
citation

N. M. Johnson, "Electric-field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal silicon," Applied Physics Letters, Vol. 47, pp. 874-876 (1985).