Measurement of gap states in a-Si:H by photocapacitance spectroscopy

• Proceedings of the 17th International Conference on the Physics of Semiconductors

citation

N. M. Johnson and D. K. Biegelsen, "Measurement of gap states in a-Si:H by photocapacitance spectroscopy," Proceedings of the 17th International Conference on the Physics of Semiconductors (Springer-Verlag, New York, 1985), eds. D. J. Chadi and W. A. Harrison, pp. 817-820.