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Photodepopulation-induced ESR measurement of deep gap states in a-Si:H

 
 
citation

D. K. Biegelsen and N. M. Johnson, "Photodepopulation-induced ESR measurement of deep gap states in a-Si:H," eds. P. C. Taylor and S. G. Bishop, Proceedings of American Institute of Physics Conference on Optical Effects in Amorphous Semiconductors; 1984 August 1-4; Snowbird. New York: American Institute of Physics; 1984; Vol. 120: pp. 32-39.