Photodepopulation-induced ESR measurement of deep gap states in a-Si:H

• Proceedings of AIP Conference on Optical Effects in Amorphous Semiconductors

citation

D. K. Biegelsen and N. M. Johnson, "Photodepopulation-induced ESR measurement of deep gap states in a-Si:H," eds. P. C. Taylor and S. G. Bishop, Proceedings of American Institute of Physics Conference on Optical Effects in Amorphous Semiconductors; 1984 August 1-4; Snowbird. New York: American Institute of Physics; 1984; Vol. 120: pp. 32-39.