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Electronic defects in silicon after transient isothermal annealing

 
 
citation

G. Pensl, M. Schulz, P. Stolz, N. M. Johnson, J. F. Gibbons, and J. Hoyt, "Electronic defects in silicon after transient isothermal annealing," eds. J. C. C. Fan and N. M. Johnson, Proceedings of Materials Research Society Symposium on Energy Beam-Solid Interactions and Transient Thermal Processing; 1983 November 14-17; Boston. New York: Elsevier Science Publishing Co., Inc; 1984; Vol. 23: pp. 347-358.