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Electronic traps and Pb centers at the Si/SiO2 interface: band-gap energy distribution

  • Journal of Applied Physics
 
 
citation

E. H. Poindexter, G. J. Gerardi, M.-E. Rueckel, P. J. Caplan, N. M. Johnson, and D. K. Biegelsen, "Electronic traps and Pb centers at the Si/SiO2 interface: band-gap energy distribution," Journal of Applied Physics, Vol. 56, pp. 2844-2849 (1984).

PARC authors

Noble Johnson
David Biegelsen

 

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