Characteristic electronic defects at the Si-SiO2 interface

• Applied Physics Letters

citation

N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S.-T. Chang, E. H. Poindexter, and P. J. Caplan, "Characteristic electronic defects at the Si-SiO2 interface," Applied Physics Letters, Vol. 43, pp. 563-565 (1983).