home › resources & publications › electron-beam-induced-current measurements in silicon-on-insulator films prepared by zone-melting recrystallization
TECHNICAL PUBLICATIONS:
Electron-beam-induced-current measurements in silicon-on-insulator films prepared by zone-melting recrystallization
- Applied Physics Letters
citation
E. W. Maby, H. A. Atwater, A. L. Keigler, and N. M. Johnson, "Electron-beam-induced-current measurements in silicon-on-insulator films prepared by zone-melting recrystallization," Applied Physics Letters, Vol. 43, pp. 482-484 (1983).
PARC author
subscribe
enter email to choose newsletters:
