Correlated paramagnetic defects and electronic deep levels at the oxidized silicon surface

• Proceedings of the International Conference on Insulating Films on Semiconductors

citation

E. H. Poindexter, P. J. Caplan, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, and S. T. Chang, "Correlated paramagnetic defects and electronic deep levels at the oxidized silicon surface," Proceedings of the International Conference on Insulating Films on Semiconductors (Elsevier, New York, 1983), eds. J. F. Verweij and D. R. Wolters, pp. 24-27.