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Correlated paramagnetic defects and electronic deep levels at the oxidized silicon surface

 
 
citation

E. H. Poindexter, P. J. Caplan, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, and S. T. Chang, "Correlated paramagnetic defects and electronic deep levels at the oxidized silicon surface," Proceedings of the International Conference on Insulating Films on Semiconductors (Elsevier, New York, 1983), eds. J. F. Verweij and D. R. Wolters, pp. 24-27.