Electronic defect levels in plasma-deposited amorphous silicon

• Tetrahedrally Bonded Amorphous Semiconductors, AIP Conference Proceedings, vol. 73

citation

N. M. Johnson, M. J. Thompson, and R. A. Street, "Electronic defect levels in plasma-deposited amorphous silicon," Tetrahedrally Bonded Amorphous Semiconductors, AIP Conference Proceedings, vol. 73 (Amer. Inst. Phys., New York, 1981), eds. R. A. Street, D. K. Biegelsen, and J. C. Knights, pp. 212-216.