home › resources & publications › grain boundaries in p-n junction diodes fabricated in laser-recrystallized silicon thin films
TECHNICAL PUBLICATIONS:
Grain boundaries in p-n junction diodes fabricated in laser-recrystallized silicon thin films
- Applied Physics Letters
citation
N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, "Grain boundaries in p-n junction diodes fabricated in laser-recrystallized silicon thin films," Applied Physics Letters, Vol. 38, pp. 900-902 (1981).
PARC authors
subscribe
enter email to choose newsletters:
