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Hydrogenation of defects at the Si-SiO2 interface

  • Insulating Films on Semiconductors
 
 
citation

N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, "Hydrogenation of defects at the Si-SiO2 interface," Insulating Films on Semiconductors (Springer-Verlag, New York, 1981), eds. M. Schulz and G. Pensl, pp. 35-38.

PARC authors

Noble Johnson
David Biegelsen

 

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