homeresources & publications › hydrogenation of defects at the si-sio2 interface

TECHNICAL PUBLICATIONS:

Hydrogenation of defects at the Si-SiO2 interface

 
 
citation

N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, "Hydrogenation of defects at the Si-SiO2 interface," Insulating Films on Semiconductors (Springer-Verlag, New York, 1981), eds. M. Schulz and G. Pensl, pp. 35-38.