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TECHNICAL PUBLICATIONS:
Low-temperature annealing and hydrogenation of defects at the Si-SiO2 interface
- Journal of Vacuum Science and Technology
citation
N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, "Low-temperature annealing and hydrogenation of defects at the Si-SiO2 interface," Journal of Vacuum Science and Technology, Vol. 19, pp. 390-394 (1981).
PARC authors
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