homeresources & publications › a comparison of ion-implantation-induced deep levels in scanned electron-beam-annealed and cw laser-annealed silicon

TECHNICAL PUBLICATIONS:

A comparison of ion-implantation-induced deep levels in scanned electron-beam-annealed and CW laser-annealed silicon

 
 
citation

N. M. Johnson, D. J. Bartelink, M. D. Moyer, J. F. Gibbons, A. Lietoila, K. N. Ratnakumar, and J. L. Regolini, "A comparison of ion-implantation-induced deep levels in scanned electron-beam-annealed and CW laser-annealed silicon," Laser and Electron Beam Processing of Materials (Academic Press, New York, 1980) eds. C. W. White and P. S. Peercy, pp. 423-429.