Surface-potential dependence of EPR centers at the Si/SiO2 interface

• The Physics of MOS Insulators

citation

E. H. Poindexter, P. J. Caplan, J. J. Finnegan, N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, "Surface-potential dependence of EPR centers at the Si/SiO2 interface," The Physics of MOS Insulators (Pergamon Press, New York, 1980), eds. G. Lucovsky, S. T. Pantelides, and F. L. Galeener, pp. 326-330.