Physical properties of ion-implanted SEM-annealed silicon

• Laser and Electron Beam Processing of Materials

citation

J. L. Regolini, N. M. Johnson, R. Sinclair, T. W. Sigmon, and J. F. Gibbons, "Physical properties of ion-implanted SEM-annealed silicon," Laser and Electron Beam Processing of Materials (Academic Press, New York, 1980) eds. C. W. White and P. S. Peercy, pp. 297-302.