Studies of the effect of oxidation time and temperature on the Si-SiO2 interface using Auger sputter profiling

• Journal of Applied Physics

citation

Helms, C. R.; Johnson, N. M.; Schwarz, S. A.; Spicer, W. E. Studies of the effect of oxidation time and temperature on the Si-SiO2 interface using Auger sputter profiling. Journal of Applied Physics, Vol. 50, pp. 7007-7014 (1979).