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Measurement of interface defect states at oxidized silicon surfaces by constant-capacitance DLTS

  • Journal of Vacuum Science and Technology
 
 
citation

N. M. Johnson, D. J. Bartelink, and J. P. McVittie, "Measurement of interface defect states at oxidized silicon surfaces by constant-capacitance DLTS," Journal of Vacuum Science and Technology, Vol. 16, pp. 1407-1411 (1979).

PARC author

Noble Johnson

 

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