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High-resolution scanning electron-beam annealing of ion-implanted silicon
- Applied Physics Letters
citation
K. N. Ratnakumar, R. F. W. Pease, D. J. Bartelink, N. M. Johnson, and J. D. Meindl, "High-resolution scanning electron-beam annealing of ion-implanted silicon," Applied Physics Letters, Vol. 35, pp. 463-466 (1979).
PARC author
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