Transient capacitance measurements of electronic states at the SiO2-Si interface

• The Physics of SiO2 and Its Interfaces

citation

N. M. Johnson, D. J. Bartelink, and M. Schulz, "Transient capacitance measurements of electronic states at the SiO2-Si interface," The Physics of SiO2 and Its Interfaces (Pergamon Press, New York, 1978), ed. S. T. Pantelides, pp. 421-427.